Essentially, only the 10-m long point-defect cavity requires electric driving to achieve electro-optic modulation. Liang, H., Luo, R., He, Y., Jiang, H. & Lin, Q. & Fan, S. Complete optical isolation created by indirect interband photonic transitions. We realize an intensity modulator of 12.5 mm long modulation section, which exhibits a low half-wave voltage of 1.7 V and a large 3 dB modulation bandwidth of >70 GHz. These authors contributed equally: Cheng Wang, Mian Zhang, John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA, Cheng Wang,Mian Zhang,Maxime Bertrand,Amirhassan Shams-Ansari&Marko Lonar, Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, China, Xi Chen,Sethumadhavan Chandrasekhar&Peter Winzer, LP2N, Institut dOptique Graduate School, CNRS, University of Bordeaux, Talence, France, Department of Electrical Engineering and Computer Science, Howard University, Washington, DC, USA, You can also search for this author in 8c). npj Quantum Information Further increase of the modulation frequency shifts apart the two side lobes accordingly, with amplitude decreased, while the position of the center lobe remains unchanged, as expected from the non-adiabatic driving. ac, Normalized optical transmission of the 20-mm (a), 10-mm (b) and 5-mm (c) device as a function of the applied voltage, showing half-wave voltages of 1.4V, 2.3V and 4.4V, respectively. 1e and 2). High-performance hybrid silicon and lithium niobate Mach Zehnder modulators for 100 Gbit s1 and beyond. Nguyen, H. C., Hashimoto, S., Shinkawa, M. & Baba, T. Compact and fast photonic crystal silicon optical modulators. Poberaj, G., Hu, H., Sohler, W. & Gnter, P. Lithium niobate on insulator (LNOI) for micro-photonic devices. 42.25.p. Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator. M.L. Provided by the Springer Nature SharedIt content-sharing initiative. The RF driving power is 16mW. This can be changed simply by engineering the photonic-crystal mirror on the other side to function as the output port. 1e). The sub-wavelength-scale EOM cavity enables compact optoelectronic integration to achieve not only a high electro-optic tuning efficiency up to 16.0pmV1 (corresponding to 1.98GHzV1) that is significantly beyond other LN EOM resonators13,14,15,16,18,19,23,26, but also a large modulation bandwidth up to 17.5GHz that reaches the photon-lifetime limit of the EOM cavity. volume562,pages 101104 (2018)Cite this article. Its low operating voltage makes it convenient to use a function generator as the driver. Lithium niobate etching is not required for making the hybrid optical waveguides. To show this phenomenon, we applied a sinusoidal RF signal at a certain frequency to the EOM and monitored the transmission spectrum of the device by scanning laser back and forth across the cavity resonance. & Smith, B. J. Bandwidth manipulation of quantum light by an electro-optic time lens. The scale bar on the left represents the strength of normalized electrical field (Enorm) for d, f, g. The photonic-crystal cavity is oriented along the y-axis such that the dominant optical field is in parallel with the optical axis of underlying LN medium (Fig. Top. The equipment in the highlighted dashed box is used for characterizing the performance of electro-optic modulation. The flexible electro-optic modulation shown here may offer a convenient method for controlling the spectrotemporal properties of photons inside the cavity and for creating exotic quantum states48 that are crucial for quantum photonic applications. B. Attojoule optoelectronics for low-energy information processing and communications. 1e), with the lattice constant varying from 450 to 550nm, is designed and placed in front of the left mirror to reduce the coupling loss. Article However, negligible degradation observed between Fig. 6, 488503 (2012). Nature 546, 622626 (2017). 3). This value is significantly larger than those in other LN EOM resonators13,14,15,16,18,19,23,26, which is primarily benefited from the strong optical field confinement, large optical and electric field overlap, and the resulting compact optical and electric integration offered by our devices. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD. Photonics 4, 518526 (2010). Laser Photon. CAS Extended Data Fig. Opt. 24, 234236 (2012). Difficulty in etching lithium niobate (LN) results in a relatively high propagation loss, which necessitates sophisticated processes to fabricate high-quality factor (Q) microresonators. Photon. The key modulation waveguide structure is a field-enhanced slot waveguide formed by embedding silicon nanowires in a thin-film lithium niobate (LN), which is different from the previously . 41, 57005703 (2016). Device fabrication is performed at the Harvard University Center for Nanoscale Systems, a member of the National Nanotechnology Coordinated Infrastructure Network, which is supported by the NSF under ECCS award no. Our thin-film modulator (a) has an oxide layer underneath the device layer, so that velocity matching can be achieved while maximum electro-optic efficiency is maintained. Light Sci. Nat. 35, 411417 (2017). Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation. Due to the high permittivity of LN at radio frequency, the commonly used full surrounding air cladding43,45,46 is not suitable for EOM since it would significantly reduce the coupling between the optical and electric fields. Jian, J. et al. Lithium Niobate Nonlinear Thermal Waveguide MODE Automation API Nonlinear Optics Photonic Integrated Circuits - Active Computing Second-harmonic generation (SHG) in a Lithium Niobite - LiNbO3 (LNO) nanophotonic waveguide is studied using temperature modulation to achieve efficient phase matching. Rep. 7, 46313 (2017). The fully on-chip design achieves a full-swing extinction ratio of 11.5dB. a, b, Schematics of the cross-sections of thin-film (a) and conventional (b) LN modulators. Optica 4, 15361537 (2017). Article Opt. Phys. 1541959. Electron. 24, 3400114 (2018). Laser. Li, M. et al. 100GHz siliconorganic hybrid modulator. Nature Silicon optical modulators. 8b), which, however, might sacrifice the optical Q due to metallic losses. IEEE Photonics Technol. Shakoor, A. et al. 6a). Thin-lm lithium niobate on insulator (LNOI) platform. Broadband modulation of light by using an electro-optic polymer. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate. Optica 1, 112118 (2014). Nat. Express 21, 3035030357 (2013). Our traveling-wave design and advanced index-matching technologies enable optical response over the entire millimeter-wave spectrum (up to 300 GHz). Ozaki, J., Ogiso, Y. Sci. Nature 556, 483486 (2018). Applied Physics, Optics / Photonics, Tiantsai Lin Professor of Electrical Engineering, Leah Burrows M.L. J. Lightwave Technol. A 10-Gbit/s lithium niobate intensity module provides chirp-free modulation at 1550 nm. NTT Tech. Here, we make an important step towards miniaturizing functional components on this platform, reporting high-speed LN electro-optic modulators, based upon photonic crystal nanobeam resonators. Marpaung, D., Yao, J. Proc. 1 Half-wave voltages of devices with different active lengths. In the past decade, photonic-crystal EOMs have been developed on various material platforms such as silicon32,33,34, GaAs35, InP36, polymers37,38, ITO39, etc. That highlighted in blue indicates the large metal pad used for contacting the RF probe. Such a configuration reduces the critical requirement of electrode alignment as needed in . Long haul telecommunication networks, data center optical interconnects, and microwave photonic systems all rely on lasers to generate an optical carrier used in data transmission. 4, e255 (2015). Over 67GHz bandwidth and 1.5V InP-based optical IQ modulator with nipn heterostructure. Figure8b, c shows the numerically simulated tuning efficiency and the corresponding optical Q, respectively. Photonics 13, 8090 (2019). Opt. Science 318, 15671570 (2007). Low power 50Gb/s silicon traveling wave MachZehnder modulator near 1300nm. P.W. Lu, H. et al. 6a, with a broadened spectral linewidth dependent on the driving power. Article [29] Owing to the disparity between the dielectric constants of lithium niobate and silica, the electrical field primarily affected the LN core through the slab. Di Zhu, and Mengjie Yu, from SEAS, Hannah R. Grant, Leif Johansson from Freedom Photonics and Lingyan He and Mian Zhang from HyperLight Corporation. Nat. Google Scholar. Lithium niobate (LiNbO3) modulator can be regarded as a technology platform that can add values to optical networks and is suitable for addressing many issues. 8b, c. The data that support the findings of this study are available from the corresponding author upon reasonable request. and JavaScript. Reference [18] has recently emerged as a promising approach to realize integrated EO modulators with stronger optical connement and high EO efciencies while occupying a smaller footprint [4], [19]-[22]. Photon-level tuning of photonic nanocavities. Next, the team aims to increase the lasers power and scalability for even more applications. EDFA, erbium-doped fibre amplifier; FPC, fibre-polarization controller; MZM, MachZehnder modulator (commercial); OSA, optical spectrum analyser; VOA, variable optical attenuator. Javid, U. & Wang, A. X. Open Access articles citing this article. This is a typical signature of resonance modulation in the sideband-unresolved regime, where the cavity resonance follows adiabatically the electric driving signal in a sinusoidal fashion, resulting in a broadened average transmission spectrum (Fig. Integrated lithium niobate photonics is a promising platform for the development of high-performance chip-scale optical systems, but getting a laser onto a lithium niobate chip has proved to be one of the biggest design challenges, saidMarko Loncar, the Tiantsai Lin Professor of Electrical Engineering and Applied Physics at SEAS and senior author of the study. We have applied a voltage of 25V to the device (not shown in the figure) and did not observe any degradation. The devices were fabricated on a 300-nm-thick x-cut single-crystalline LN thin film bonded on a 3-m silicon dioxide layer sitting on a silicon substrate (from NanoLN). CAS DOI: 10.1364/OL.426083 Abstract L V cm, and the 3 dB electro-optical bandwidth is about 55 GHz. For the application of high-speed electro-optic switching, our simulations show that the electrode-waveguide spacing can be decreased to 1.5m for an optical Q of ~5000 (corresponding to a modulation bandwidth of ~45GHz), which will improve the modulation efficiency to 2.38GHzV1 (simulation details in Methods). Lett. IEEE Photonics Technol. Quant. Quantum Electron. Femtojoule electro-optic modulation using a silicon-organic hybrid device. Acousto-optical modulation of thin film lithium niobate waveguide devices. Here, we make an important step towards miniaturizing functional components on this. 6, 6982 (2000). Reed, G. T., Mashanovich, G., Gardes, F. Y. We believe this is the first LN EOM ever reported with such combined device characteristics and modulation performance. When the EOM is driven at a modulation frequency of 600MHz much smaller than the cavity linewidth of 1.4GHz, increasing the driving power simply broadens the transmission spectrum into one with two shallow side lobes, as shown in Fig. http://www.fujitsu.com/jp/group/foc/en/products/optical-devices/100gln/, Eospace 2017 Advanced Products. It, however, degrades considerably the optical Q of the cavity (Fig. As an example application, we demonstrate electro-optic switching of non-return-to-zero (NRZ) signal at a rate of 11Gbs1, with a switching energy as low as 22fJ per bit that is more than one order of magnitude smaller than other LN EOMs1,13,14,15,16,17,18,19,20,21,22,23,24,25,26. The resist residue was removed by a further O+ plasma etching. Opt. If material is not included in the articles Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. LiNbO. Loncar is a cofounder of HyperLight Corporation, a startup which was launched to commercialize integrated photonic chips based on certain innovations developed in his lab. We thank J. Khan for discussions on the LN platform, H. Majedi for help with the equipment, and C. Reimer, S. Bogdanovi, L. Shao and B. Desiatov for feedback on the manuscript. Thomson, D. J. et al. & Lin, Q. High-Q 2D lithium niobate photonic crystal slab nanoresonators. @article{Ghosh2023WaferscaleHI, title={Wafer-scale heterogeneous integration of thin film lithium niobate on silicon-nitride photonic integrated circuits with low loss bonding interfaces}, author={Siddhartha Ghosh and Siva Yegnanarayanan and Dave Kharas and Matthew Ricci and Jason Plant and Paul W. Juodawlkis}, journal={Optics Express}, year . With these devices, we are able to realize efficient driving of the optical mode in both adiabatic sideband-unresolved and non-adiabatic sideband-resolved regimes, and to observe the transition in between. PubMedGoogle Scholar. Generation of ultrastable microwaves via optical frequency division.
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